Base pressure is the 10⁻¹⁰ mbar range ensure atomically clean conditions by minimizing residual gases adsorption, enabling reproducible and high-fidelity surface-sensitive measurements.

UHV chamber dedicated to in situ sample treatment and thin film growth. Cleaning cycles can be performed using Ar⁺ ion sputtering and thermal annealing. The integrated instrumentation includes LEED for surface structural characterization, QCM for real-time monitoring of deposition rate and film thickness, and RGA for residual gas analysis and contamination monitoring under UHV conditions.

The Aarhus SPM, integrated with the Nanonis platform, combines a minimized tip-sample loop design with ultra-low-noise real-time control electronics, ensuring high stability, vibration rejection, and reproducible atomic resolution under UHV conditions.

Modes:

• STM-LDOS imaging via tunneling current (pA-nA, bias typically ±10 mV – ±3 V, extendable up to ±10 V).
• nc-AFM (Δf)- KolibriSensor , typical resonance frequencies ~20-1000 kHz, sub-nanometer amplitudes.
• STS (I–V, dI/dV)- local electronic spectroscopy (lock-in based).

Resolution and performance:

• Resolution: atomic (xy-lateral) / subatomic (z-veertical, < 1 pm sensitivity, under optimal conditions).
• Z-noise: < 2 pm RMS.
• Drift: < 0.1 nm/h (thermal-dependent).
• Scan range: ~1.5 × 1.5 × 0.2 µm³ (RT)

Scanning system: high-linearity, low-hysteresis XYZ piezo actuators with low-noise electronics (< fA/√Hz) and non-linearity compensation.

Capabilities: spectroscopy (I–V, dI/dV, Δf–z, I–z), 2D/3D mapping and in situ integration. Enables precise feedback control (current/Δf), high stability, and quantitative atomic-scale measurements over long-duration experiments.

Controlled ion bombardment under UHV conditions using a IQE 11/35, typically operated with noble gases (e.g., Ar). The system works in the 0.5–2 keV energy range and Ar pressures of 10⁻⁶–10⁻⁵ mbar, enabling efficient removal of contaminants and native oxides, as well as controlled surface modification and defect engineering. It is commonly employed in repeated sputter–anneal cycles to obtain atomically flat and well-ordered surfaces (e.g., Au(111), Cu(110), Ag(111)), and for pre-conditioning prior to high-resolution STM/nc-AFM measurements.

Gas injection system using precision leak valves for the introduction of gases.

Electron bombardment heating system for controlled thermal treatment under UHV conditions. Heating with low outgassing and temperatures up to ~800 °C in standard operation and up to ~2000 °C (≈2500 K) in optimized configurations. Temperature is monitored via thermocouples (Type K) or pyrometric methods depending on the thermal regime.

UHV-compatible sample holder supporting samples up to 12 × 12 mm² with thicknesses of 0.5-4 mm, with optional compatibility for 1'' sample plates. It includes an integrated sample bias connection and an electron bombardment (e-beam) heating system with filament, enabling continuous operation up to ~800 °C and peak temperatures up to ~1200 °C (short-term). Liquid nitrogen (LN₂) cooling down to ~90 K is available (except for 5-axis continuous rotation configurations). Temperature is monitored via a thermocouple mounted directly on the sample stage, ensuring precise thermal control over a wide range (~90 K – 1200 °C) under UHV conditions.