- https://www.cells.es/en/media/events/alba-public-events/low-energy-ion-implantation-on-graphene-towards-nano-functionalization-of-2d-materials
- Low-energy ion implantation on graphene: towards nano-functionalization of 2D materials
- 2016-07-22T15:00:00+02:00
- 2016-07-22T23:59:59+02:00
- Dr. Alessandro Sala, Nanospectroscopy beamline, Elettra - Sincrotrone Trieste
- When
- Jul 22, 2016 from 03:00 PM (Europe/Madrid / UTC200)
- Where
- ALBA Synchrotron - Marie Curie Room
- Contact Name
- Inma Hernández
- Contact Phone
- +34 93 592 43 89
- Web
- Visit external website
- Add event to calendar
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Abstract
The exploitation of 2D materials in the next generation of electronics depends on the capability of preserving and tailoring their electronic and transport properties. Low-energy ion implantation is a promising technique to modify such properties in a controlled and localized way. In particular, single-layer graphene grown on Ir(111) and irradiated with low-energy Ar and N ions was characterized with the Spectroscopic PhotoEmission and Low-Energy Electron Microscopy at the Nanospectroscopy beamline of the Elettra synchrotron radiation facility in Trieste, Italy. The irradiation with Ar led to the formation of nanobubbles between graphene and substrate, with a lateral size of tens of nm and heigth of several atomic layers. Remarkably, the bubbles were stable up to a temperature of 1100 °C and can maintain a pressure of few tens of GPa. This experiment can be exploited to study gases at high pressures and temperatures with surface science techniques. The irradiation with N through a metallic mask placed in direct contact with graphene allowed the creation of micron-sized 2D heterojunctions betwee n non-doped, conductive and doped, semiconductive areas. This proof-of-principle is a first step towards the creation of nanocircuits embedded on a single-atom sheet of graphene. The scalability of such process towards nanometer scale and the preservation in normal atmospheric conditions will be discussed.
