Today, most modern technology relies mainly on materials with reduced dimensionalities, such as thin films (2D), nanowires (1D), and quantum dots (0D). Particularly semiconductor nanowires (NWs) are natural candidates for a wide range of novel devices having applications in optoelectronics, nanoelectronics, and sensors.
The purpose of the presentation is to illuminate several aspects regarding the synthesis of silicon and germanium NWs, their electrical properties, and the fabrication of novel devices made thereof. Following an introductory survey of NW growth methods, experimental results concerning the epitaxial growth of nanowires are presented. The diameter dependence of the growth velocity and crystallographic growth direction of NWs, a parameter that is of great importance especially in view of the technical applicability of epitaxially grown NWs will be discussed.

A coffee break will be offered at 11.45 am.